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| SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE(sat) = 350m PART MARKING DETAIL COMPLEMENTARY TYPE FZT591A FZT491A at 1A FZT591A C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j :T stg VALUE -40 -40 -5 -2 -1 -200 2 -55 to +150 UNIT V V V A A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -40 -40 -5 -100 -100 -100 -0.2 -0.35 -0.5 -1.1 -1.0 300 300 250 160 30 150 10 800 MAX. UNI CONDITIONS. T V V V nA nA nA V V V V V I C =-100A I C =-10mA* I E =-100A V CB =-30V V EB =-4V V CES =-30V IC =-100mA,IB =-1mA* I C =-500mA,IB =-20mA* I C =-1A, I B =-100mA* I C =-1A, I B =-50mA* I =-1A, V CE =-5V* C V BE(sat) V BE(on) h FE I C =-1mA, I C =-100mA*, I C =-500mA*, V CE =-5V I C =-1A*, I C =-2A*, MHz I C =-50mA, V CE =-10V f=100MHz pF V CB =-10V, f=1MHz Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 1 FZT591A 2 |
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